❶Information
* PECVD (Plasma Enhanced Chemical Vapor Deposition)
- Plasma를 이용한 CVD
- 원료 기체들을 플라즈마 상태로 만들어 기판에 박막증착 및 합성
- Plasma를 이용하여 저온, 저진공 조건에서 화학적 기상 증착 및 Mat'l 합성을 효율적으로 빠르게 처리 가능
- 재료에 열적 변형을 최소화 시킬 수 있고, Gas 사용량을 크게 줄일 수 있음
- Plasma system
• ICP & CCP
• RF Plasma (Frequency : 13.56MHz
• Auto Matching
- Cooling : Air or Water Cooling (Can be rapid cooling by requested spec)
- Plasma with Heating & before Heating
- Consist of
• Plasma system + Tube Furnace + Gas & Vacuum unit + APC (Auto pressure Control) +PC control (by software)
- Application
• Display, Semiconductor, Graphene & 2D Mat'l
❷SPEC
- Tube size (Quartz) : 2"(50ⅹ800mm)/ 4"(100ⅹ1200mm)/ 6"(150ⅹ1500mm), 8", 10" (by order)
- Furnace : Max 1300℃ (1Zone, 3Zone by order)
- Using Gas : H₂, CH₄, Ar, N₂, etc. (3 or 4 Gas Input by option)
- Vacuum pressure : 5ⅹ10-3Torr (by order)
- Vacuum Unit : Rotary pump (basic) + Turbo pump (by order) with Vacuum Digital Gauge
- Plasma system (by option) : ICP or CCP
- Control : Fully Automated control with Touch screen PLC or Fully Automated PLC control with LabVIEW Software
- Cooling : Air or Water or Rapid Cooling System (by order)
- Type : Horizontal or Vertial
※ All system can be made by customer SPEC
* Graphene Synthesis
•Condition
•Process
